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ILD32/ ILQ32
Vishay Semiconductors
Optocoupler, Photodarlington Output, High Gain (Dual, Quad Channel)
Features
* * * * * * Isolation Test Voltage, 5300 VRMS High Isolation Resistance, 1011 Typical Low Coupling Capacitance Standard Plastic DIP Package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
A1 C2 C3 A4
8E 7C 6C 5E
A1 C2 C3 A4 A 5
16 E 15 C 14 C 13 E 12 E 11 C 10 C 9 E
Agency Approvals
* UL1577, File No. E52744 System Code H or J, Double Protection * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1
C6 C 7
A8
i179017
e3
Description
The ILD32/ ILQ32 are optically coupled isolators with a gallium arsenide infrared LED and a silicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields.
Pb
Pb-free
Order Information
Part ILD32 ILQ32 ILD32-X006 ILD32-X007 ILD32-X009 ILQ32-X007 ILQ32-X009 Remarks CTR > 500 %, DIP-8 CTR > 500 %, DIP-16 CTR > 500 %, DIP-8 400 mil (option 6) CTR > 500 %, SMD-8 (option 7) CTR > 500 %, SMD-8 (option 9) CTR > 500 %, SMD-8 (option 7) CTR > 500 %, SMD-8 (option 9)
For additional information on the available options refer to Option Information.
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Peak reverse voltage Forward continuous current Power dissipation Derate linearly from 25C Test condition Symbol VR IF Pdiss Value 3.0 60 100 1.33 Unit V mA mW mW/C
Document Number 83650 Rev. 1.5, 26-Oct-04
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ILD32/ ILQ32
Vishay Semiconductors Output
Parameter Collector-emitter breakdown voltage Collector (load) current Power dissipation Derate linearly from 25C Test condition Symbol BVCEO IC Pdiss Value 30 125 150 2.0 Unit V mA mW mW/C
Coupler
Parameter Isolation test voltage Creepage Clearance Comparative tracking index per DIN IEC 112/VDE303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Total dissipation Derate linearly from 25 C Storage temperature Operating temperature Lead soldering time at 260 C
1) 1)
Test condition t = 1.0 sec.
Part
Symbol VISO
Value 5300 7 7 175
Unit VRMS mm mm
RIO RIO ILD32 ILQ32 ILD32 ILQ32 Tstg Tamb Ptot Ptot
1012 1011 400 500 5.33 6.67 - 55 to + 150 - 55 to + 100 10
mW mW mW/C mW/C C C sec.
between emitter and detector refer to standard climate 23 C/50 %RH; DIN 50014
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Reverse current Capacitance Test condition IF = 10 mA VR = 3.0 V VR = 0 V Symbol VF IR CO Min Typ. 1.25 0.1 25 Max 1.5 100 Unit V pF pF
Output
Parameter Collector-emitter breakdown voltage Breakdown voltage emittercollector Collector-emitter leakage current Test condition IC = 100 A, IF = 0 IE = 100 A VCE = 10 V, IF = 0 Symbol BVCEO BCECO ICEO Min 30 5.0 10 1.0 100 Typ. Max Unit V nA nA
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Document Number 83650 Rev. 1.5, 26-Oct-04
ILD32/ ILQ32
Vishay Semiconductors Coupler
Parameter Collector emitter Capacitance (input-output) Test condition IC = 2.0 mA, IF = 8.0 mA Symbol VCEsat CIO 0.5 Min Typ. Max 1.0 Unit V pF
Current Transfer Ratio
Parameter Current Transfer Ratio Test condition IF = 10 mA, VCE = 10 V Symbol CTR Min 500 Typ. Max Unit %
Switching Characteristics
Parameter Turn-on time Turn-off time Test condition VCC = 10 V, IF = 5.0 mA, RL = 100 VCC = 10 V, IF = 5.0 mA, RL = 100 Symbol ton toff Min Typ. 15 30 Max Unit s s
Typical Characteristics (Tamb = 25 C unless otherwise specified)
1.4
VF - Forward Voltage - V
1.2
NCTRce - Normalized CTR
1. 3 1.2 1.1 1.0 0.9 0.8 0.7 .1
Ta = -55C
1.0 0.8 0.6 0.4 0.2
Normalized to: Vce = 10 V IF = 10 mA Ta = 25C Vce = 10 V
Ta = 25C
Ta = 85C
Vce =1V 0.0 .1 1 10 100 1000
1 10 IF - Forward Current - mA
100
iild32_02
IF - LED Current - mA
iild32_01
Figure 1. Forward Voltage vs. Forward Current
Figure 2. Normalized Non-saturated and Saturated CTRCE vs. LED Current
Document Number 83650 Rev. 1.5, 26-Oct-04
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ILD32/ ILQ32
Vishay Semiconductors
10
NIce - Normalized Ice
1
Normalized to: Ta = 25C IF = 10 mA Vce = 10 V
Vce = 10 V IF Vce = 1V
.1 VO .01
tD tR tPLH VTH=1.5 V tF
.001 .1
iild32_03
tPHL 10 1 IF - LED Current - mA 100
iild32_06
tS
Figure 3. Normalized Non-Saturated and Saturated CollectorEmitter Current vs. LED Current
Figure 6. Switching Timing
80
tpLH -Low/High Propagation Delay - s
TA = 25C, VCC = 10 V Vth = 1.5 V 60
1 k VCC=10 V 220 i F=10 KHz, DF=50% RL VO
40 470 20 100 0 0 5 10 15 20
iild32_07
I F =5 mA
IF - LED Current - mA
iild32_04
Figure 4. Low to High Propagation Delay vs. Collector Load Resistance and LED Current
Figure 7. Switching Schematic
20
tpHL -High/Low Propagation Delay - s
1k 15
TA = 25C VCC = 10 V Vth = 1.5 V
10 100 5
0 0
iild32_05
5
10
15
20
IF - LED Current - mA
Figure 5. High to low Propagation Delay vs. Collector Load Resistance and LED Current
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Document Number 83650 Rev. 1.5, 26-Oct-04
ILD32/ ILQ32
Vishay Semiconductors Package Dimensions in Inches (mm)
pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8
ISO Method A
3
2
1
.379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56)
i178006
.300 (7.62) typ.
10 .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 3-9 .008 (.20) .012 (.30)
.230(5.84) .110 (2.79) .250(6.35) .130 (3.30)
Package Dimensions in Inches (mm)
pin one ID 8 7 6 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 10 11 12 13 14 15 16
ISO Method A
.779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .031(.79) .130 (3.30) .150 (3.81) 4 .018 (.46) .022 (.56)
i178007
.300 (7.62) typ. .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35)
.020(.51) .035 (.89) .100 (2.54)typ. .050 (1.27)
10 typ. 3-9 .008 (.20) .012 (.30)
Document Number 83650 Rev. 1.5, 26-Oct-04
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ILD32/ ILQ32
Vishay Semiconductors
Option 6
.407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN.
Option 7
.300 (7.62) TYP .
Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.
.180 (4.6) .160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX.
.012 (.30) typ.
.020 (.51) .040 (1.02)
.315 (8.00) min.
15 max.
18450
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Document Number 83650 Rev. 1.5, 26-Oct-04
ILD32/ ILQ32
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83650 Rev. 1.5, 26-Oct-04
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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